Catalogs
Name | Manufacturer | Description | |||||
---|---|---|---|---|---|---|---|
A9050 13 | Perkin Elmer | Smallest size photocell in epoxy encapsulation with spectral range at 550 nm peak. | |||||
A9050 14 | Perkin Elmer | Smallest size photocell in epoxy encapsulation with spectral range at 550 nm peak. | |||||
A9060 09 | Perkin Elmer | Smallest size photocell in epoxy encapsulation with spectral range at 600 nm peak. | |||||
A9060 11 | Perkin Elmer | Smallest size photocell in epoxy encapsulation with spectral range at 600 nm peak. | |||||
A9060 12 | Perkin Elmer | Smallest size photocell in epoxy encapsulation with spectral range at 600 nm peak. | |||||
A9060 13 | Perkin Elmer | Smallest size photocell in epoxy encapsulation with spectral range at 600 nm peak. | |||||
A9060 14 | Perkin Elmer | Smallest size photocell in epoxy encapsulation with spectral range at 600 nm peak. | |||||
A9060 31 | Perkin Elmer | Smallest size photocell in epoxy encapsulation: Vmax = 300V, spectral range at 600 nm peak. | |||||
A9060 32 | Perkin Elmer | Smallest size photocell in epoxy encapsulation: Vmax = 300V, spectral range at 600 nm peak. | |||||
A9060 33 | Perkin Elmer | Smallest size photocell in epoxy encapsulation: Vmax = 300V, spectral range at 600 nm peak. | |||||
A9060 34 | Perkin Elmer | Smallest size photocell in epoxy encapsulation: Vmax = 300V, spectral range at 600 nm peak. | |||||
A9950 09 | Perkin Elmer | Photocell series epoxy-encapsulated. ?Spectral sensitivity is at 530 nm (max), has a low temperature coefficient and high linearity. Vmax: 100V,?Pmax: 90mW | |||||
A9950 11 | Perkin Elmer | Photocell series epoxy-encapsulated. ?Spectral sensitivity is at 530 nm (max), has a low temperature coefficient and high linearity. Vmax: 100V,?Pmax: 90mW | |||||
A9950 12 | Perkin Elmer | Photocell series epoxy-encapsulated. ?Spectral sensitivity is at 530 nm (max), has a low temperature coefficient and high linearity. Vmax: 100V,?Pmax: 90mW | |||||
A9950 13 | Perkin Elmer | Photocell series epoxy-encapsulated. ?Spectral sensitivity is at 530 nm (max), has a low temperature coefficient and high linearity. Vmax: 100V,?Pmax: 90mW | |||||
A9950 14 | Perkin Elmer | Photocell series epoxy-encapsulated. ?Spectral sensitivity is at 530 nm (max), has a low temperature coefficient and high linearity. Vmax: 100V,?Pmax: 90mW | |||||
ACULED? DYO | Perkin Elmer | ACULED? DYO | |||||
AGA 0017 DDS 2 (H) | Perkin Elmer | B1 | |||||
AGA 1015 WZ 1 (H) | Perkin Elmer | ||||||
B106023 | Perkin Elmer | Photocells series includes, metal housings, in 2 different sizes TO-8 and TO-5. Large size photocell in TO-8 metal housing,? Vmax = 300 V,Spectral sensitivity is at 600 nm | |||||
B9060 32 | Perkin Elmer | Photocell series epoxy encapsulated, large size, high power and voltage rating Vmax: 300V, Pmax: 200 m. Spectral sensitivity is at 600 nm | |||||
B9060 33 | Perkin Elmer | Photocell series epoxy encapsulated, large size, high power and voltage rating Vmax: 300V, Pmax: 200 mW. Spectral sensitivity is at 600 nm | |||||
BG 0625-2 (H) | Perkin Elmer | B1 | |||||
BGA 1017 HA3 (H) | Perkin Elmer | ||||||
BGA 1018 AR6( A)(H) | Perkin Elmer | ||||||
BGA 1020 TAR 3 (H) | Perkin Elmer | B1 | |||||
BGS 2902 Z8 (H) | Perkin Elmer | Q2 | |||||
C30616ECERH | Perkin Elmer | High Speed InGaAs PIN photodiode on ceramic carrier with 50?m active diameter chip | |||||
C30617BFCH | Perkin Elmer | High Speed InGaAs PIN Photodiode with a 100?m active diameter chip in TO-18 ball lens package with FC receptacle | |||||
C30617BH | Perkin Elmer | High Speed InGaAs PIN Photodiode with a 100 ?m active diameter chip in TO-18 ball lens package | |||||
C30617BSCH | Perkin Elmer | High Speed InGaAs PIN Photodiode with a 100 ?m active diameter chip in TO-18 ball lens package with SC receptacle | |||||
C30617BSTH | Perkin Elmer | High Speed InGaAs PIN Photodiode in TO-18 ball lens package with ST receptacle | |||||
C30617ECERH | Perkin Elmer | High Speed InGaAs PIN photodiode on ceramic carrier with 100 ?m active diameter chip | |||||
C30618BFCH | Perkin Elmer | High Speed InGaAs PIN Photodiode with a 350 ?m active diameter chip in TO-18 ball lens package with FC receptacle | |||||
C30618ECERH | Perkin Elmer | High Speed InGaAs PIN photodiode on ceramic carrier with 350 ?m active diameter chip | |||||
C30618GH | Perkin Elmer | High Speed InGaAs PIN Photodiode with a 350 ?m active diameter chip in TO-18 package with flat glass window | |||||
C30619GH | Perkin Elmer | Large Area InGaAs PIN Photodiode with a 0,5 mm active diameter chip in TO-18 package with flat glass window | |||||
C30626H | Perkin Elmer | Silicon Avalanche Photodiode. Large area in ceramic package for radiation detection | |||||
C30637ECERH | Perkin Elmer | High Speed InGaAs PIN photodiode on ceramic carrier with 75 ?m active diameter chip | |||||
C30641EH-DTC | Perkin Elmer | Large Area InGaAs PIN Photodiode with a 1,0 mm active diameter chip, double TE cooled, in TO-8 package with flange | |||||
C30641EH-TC | Perkin Elmer | Large Area InGaAs PIN Photodiode with a 1,0 mm active diameter chip, TE cooled, in TO-8 package with flange | |||||
C30641GH | Perkin Elmer | Large Area InGaAs PIN Photodiode with a 1,0 mm active diameter chip in TO-18 package with flat glass window | |||||
C30642GH | Perkin Elmer | Large Area InGaAs PIN Photodiode with a 2,0 mm active diameter chip in TO-5 package with flat glass window | |||||
C30644ECERH | Perkin Elmer | InGaAs Avalanche Photodiode in cermic submount package version. 50 ?m active area. | |||||
C30644EH | Perkin Elmer | InGaAs Avalanche Photodiode in hermetic TO-18 package version. 50 ?m active area. | |||||
C30645ECERH | Perkin Elmer | InGaAs Avalanche Photodiode in cermic submount package version. 80 ?m active area. | |||||
C30645EH | Perkin Elmer | InGaAs Avalanche Photodiode in hermetic TO-18 package version. 80 ?m active area. | |||||
C30659-1060-3AH | Perkin Elmer | Avalanche Photodiode (APD) Receiver Module with 1060 nm Si-APD. 50 MHz bandwidth. | |||||
C30659-1060-R8BH | Perkin Elmer | Avalanche Photodiode (APD) Receiver Module with 1060 nm Si-APD. 200 MHz bandwidth. | |||||
C30659-1550-R08BH | Perkin Elmer | Avalanche Photodiode (APD) Receiver Module with 1550 nm InGaAs-APD. 200 MHz bandwidth. | |||||
Page: ←12345678910…→ |


Термореле 26QL,QM 01-017021-300 (-73,3 до +148С)
Пневмоусилитель Midland Pneumatic 2325M21-EC2B 1/4” NPT 3/2 MAX WP-12BAR


Датчик температуры THERMO EST SI/14 type SI 14.1 EExd


Трансмитер AGM DIN4000-13F
Датчик вибрации Bently Nevada 30008-00-12-30-02
Кабель датчика Bently Nevada 2789-180